Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface

TY - JOUR

T1 - Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface

AU - Batson, P. E.

AU - Kavanagh, K. L.

AU - Woodall, J. M.

AU - Mayer, J. W.

PY - 1986

Y1 - 1986

N2 - Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs-Ga0.85In0.15As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 0.05 eV above the GaAs valence-band maximum.

AB - Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs-Ga0.85In0.15As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 0.05 eV above the GaAs valence-band maximum.

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U2 - https://doi.org/10.1103/PhysRevLett.57.2729

DO - https://doi.org/10.1103/PhysRevLett.57.2729

M3 - Article

SN - 0031-9007

VL - 57

SP - 2729

EP - 2732

JO - Physical review letters

JF - Physical review letters

IS - 21

ER -