Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface

P. E. Batson, K. L. Kavanagh, J. M. Woodall, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

55 Scopus citations


Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs-Ga0.85In0.15As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 0.05 eV above the GaAs valence-band maximum.

Original languageAmerican English
Pages (from-to)2729-2732
Number of pages4
JournalPhysical review letters
Issue number21
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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