Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain

Yifei Huang; Bahman Hekmatshoar; Sigurd Wagner; James C. Sturm

doi:10.1109/DRC.2008.4800821

Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain

Yifei Huang
, Bahman Hekmatshoar
, Sigurd Wagner
, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	241-242
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800821
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2008.4800821

Cite this

Huang, Y., Hekmatshoar, B., Wagner, S., & Sturm, J. C. (2008). Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 241-242). Article 4800821 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800821

@inproceedings{1da041619e7046659e538389feef1f5f,

title = "Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain",

author = "Yifei Huang and Bahman Hekmatshoar and Sigurd Wagner and Sturm, \{James C.\}",

year = "2008",

doi = "10.1109/DRC.2008.4800821",

language = "English (US)",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "241--242",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Huang, Y, Hekmatshoar, B, Wagner, S & Sturm, JC 2008, Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain. in 66th DRC Device Research Conference Digest, DRC 2008., 4800821, Device Research Conference - Conference Digest, DRC, pp. 241-242, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800821

Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain. / Huang, Yifei; Hekmatshoar, Bahman; Wagner, Sigurd et al.
66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 241-242 4800821 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain

AU - Huang, Yifei

AU - Hekmatshoar, Bahman

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2008

Y1 - 2008

UR - https://www.scopus.com/pages/publications/64849111817

UR - https://www.scopus.com/pages/publications/64849111817#tab=citedBy

U2 - 10.1109/DRC.2008.4800821

DO - 10.1109/DRC.2008.4800821

M3 - Conference contribution

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 241

EP - 242

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

Electron injection mechanism in top-gate amorphous silicon thin-film transistors with self-aligned silicide source and drain

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Other

ASJC Scopus subject areas

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