Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor

G. Feng, Y. Q. Sun, W. N. Qian, L. P. Lv, J. H. Zhao, D. Tsai, M. Raghunathan, Y. Fei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The process of the epitaxial growth of 4H-SiC has been optimized to obtain higher ratio of conversion of BPDs to the TEDs on 100 mm substrates in a warm-wall planetary reactor. 100% BPD conversion ratio was successfully obtained with excellent surface morphology under optimized growth process. The high efficiency of the optimized growth process in BPD conversion is independent of the initial surface conditions and BPD density of the substrates.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages189-192
Number of pages4
ISBN (Print)9783035710427
DOIs
StatePublished - Jan 1 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

Keywords

  • 100mm substrates
  • 4H-SiC epitaxial growth
  • Basal plane dislocations
  • Warm-wall planetary reactor

Fingerprint Dive into the research topics of 'Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor'. Together they form a unique fingerprint.

  • Cite this

    Feng, G., Sun, Y. Q., Qian, W. N., Lv, L. P., Zhao, J. H., Tsai, D., Raghunathan, M., & Fei, Y. (2016). Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 189-192). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.189