Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

Sudhakar Shet, Kwang Soon Ahn, N. Ravindra, Yanfa Yan, Todd Deutsch, John Turner, M. Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
Pages277-286
Number of pages10
StatePublished - Dec 1 2009
EventMaterials Science and Technology Conference and Exhibition 2009, MS and T'09 - Pittsburgh, PA, United States
Duration: Oct 25 2009Oct 29 2009

Publication series

NameMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
Volume1

Other

OtherMaterials Science and Technology Conference and Exhibition 2009, MS and T'09
CountryUnited States
CityPittsburgh, PA
Period10/25/0910/29/09

Fingerprint

annealing
oxides
ambient temperature
temperature
metals
nitrogen
methodology

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Shet, S., Ahn, K. S., Ravindra, N., Yan, Y., Deutsch, T., Turner, J., & Al-Jassim, M. (2009). Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. In Materials Science and Technology Conference and Exhibition 2009, MS and T'09 (pp. 277-286). (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).
Shet, Sudhakar ; Ahn, Kwang Soon ; Ravindra, N. ; Yan, Yanfa ; Deutsch, Todd ; Turner, John ; Al-Jassim, M. / Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. Materials Science and Technology Conference and Exhibition 2009, MS and T'09. 2009. pp. 277-286 (Materials Science and Technology Conference and Exhibition 2009, MS and T'09).
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title = "Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films",
abstract = "In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.",
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Shet, S, Ahn, KS, Ravindra, N, Yan, Y, Deutsch, T, Turner, J & Al-Jassim, M 2009, Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. in Materials Science and Technology Conference and Exhibition 2009, MS and T'09. Materials Science and Technology Conference and Exhibition 2009, MS and T'09, vol. 1, pp. 277-286, Materials Science and Technology Conference and Exhibition 2009, MS and T'09, Pittsburgh, PA, United States, 10/25/09.

Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. / Shet, Sudhakar; Ahn, Kwang Soon; Ravindra, N.; Yan, Yanfa; Deutsch, Todd; Turner, John; Al-Jassim, M.

Materials Science and Technology Conference and Exhibition 2009, MS and T'09. 2009. p. 277-286 (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Ravindra, N.

AU - Yan, Yanfa

AU - Deutsch, Todd

AU - Turner, John

AU - Al-Jassim, M.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

AB - In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

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M3 - Conference contribution

SN - 9781615676361

T3 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

SP - 277

EP - 286

BT - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

ER -

Shet S, Ahn KS, Ravindra N, Yan Y, Deutsch T, Turner J et al. Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. In Materials Science and Technology Conference and Exhibition 2009, MS and T'09. 2009. p. 277-286. (Materials Science and Technology Conference and Exhibition 2009, MS and T'09).