Enhanced intergrain tunneling magnetoresistance in half-metallic CrO2 films

H. Y. Hwang, S. W. Cheong

Research output: Contribution to journalArticlepeer-review

209 Scopus citations


Low-field tunneling magnetoresistance was observed in films of half- metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.

Original languageEnglish (US)
Pages (from-to)1607-1609
Number of pages3
Issue number5343
StatePublished - Nov 28 1997

All Science Journal Classification (ASJC) codes

  • General


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