Epitaxial laser crystallization of thin-film amorphous silicon

J. C. Bean, H. J. Leamy, J. M. Poate, G. A. Rozgonyi, T. T. Sheng, J. S. Williams, George Celler

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Vapor-deposited amorphous silicon films of 4000 Å thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd: YAG laser radiation of 125-nsec duration at power levels of 90-120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39-μm laser pulse spots.

Original languageEnglish (US)
Pages (from-to)227-230
Number of pages4
JournalApplied Physics Letters
Volume33
Issue number3
DOIs
StatePublished - Dec 1 1978
Externally publishedYes

Fingerprint

silicon films
amorphous silicon
YAG lasers
pulsed lasers
backscattering
laser beams
vapors
crystallization
transmission electron microscopy
defects
silicon
thin films
pulses
crystals
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Bean, J. C., Leamy, H. J., Poate, J. M., Rozgonyi, G. A., Sheng, T. T., Williams, J. S., & Celler, G. (1978). Epitaxial laser crystallization of thin-film amorphous silicon. Applied Physics Letters, 33(3), 227-230. https://doi.org/10.1063/1.90324
Bean, J. C. ; Leamy, H. J. ; Poate, J. M. ; Rozgonyi, G. A. ; Sheng, T. T. ; Williams, J. S. ; Celler, George. / Epitaxial laser crystallization of thin-film amorphous silicon. In: Applied Physics Letters. 1978 ; Vol. 33, No. 3. pp. 227-230.
@article{2e551c6a4a1147e6bd57240b622c8eea,
title = "Epitaxial laser crystallization of thin-film amorphous silicon",
abstract = "Vapor-deposited amorphous silicon films of 4000 {\AA} thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd: YAG laser radiation of 125-nsec duration at power levels of 90-120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39-μm laser pulse spots.",
author = "Bean, {J. C.} and Leamy, {H. J.} and Poate, {J. M.} and Rozgonyi, {G. A.} and Sheng, {T. T.} and Williams, {J. S.} and George Celler",
year = "1978",
month = "12",
day = "1",
doi = "https://doi.org/10.1063/1.90324",
language = "English (US)",
volume = "33",
pages = "227--230",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "3",

}

Bean, JC, Leamy, HJ, Poate, JM, Rozgonyi, GA, Sheng, TT, Williams, JS & Celler, G 1978, 'Epitaxial laser crystallization of thin-film amorphous silicon', Applied Physics Letters, vol. 33, no. 3, pp. 227-230. https://doi.org/10.1063/1.90324

Epitaxial laser crystallization of thin-film amorphous silicon. / Bean, J. C.; Leamy, H. J.; Poate, J. M.; Rozgonyi, G. A.; Sheng, T. T.; Williams, J. S.; Celler, George.

In: Applied Physics Letters, Vol. 33, No. 3, 01.12.1978, p. 227-230.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial laser crystallization of thin-film amorphous silicon

AU - Bean, J. C.

AU - Leamy, H. J.

AU - Poate, J. M.

AU - Rozgonyi, G. A.

AU - Sheng, T. T.

AU - Williams, J. S.

AU - Celler, George

PY - 1978/12/1

Y1 - 1978/12/1

N2 - Vapor-deposited amorphous silicon films of 4000 Å thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd: YAG laser radiation of 125-nsec duration at power levels of 90-120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39-μm laser pulse spots.

AB - Vapor-deposited amorphous silicon films of 4000 Å thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd: YAG laser radiation of 125-nsec duration at power levels of 90-120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39-μm laser pulse spots.

UR - http://www.scopus.com/inward/record.url?scp=18844407030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844407030&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/1.90324

DO - https://doi.org/10.1063/1.90324

M3 - Article

VL - 33

SP - 227

EP - 230

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -

Bean JC, Leamy HJ, Poate JM, Rozgonyi GA, Sheng TT, Williams JS et al. Epitaxial laser crystallization of thin-film amorphous silicon. Applied Physics Letters. 1978 Dec 1;33(3):227-230. https://doi.org/10.1063/1.90324