Erratum: Effect of substrate temperature on migration of Si in planar-doped GaAs (Applied Physics Letters (1988) 53, (2504))

M. Santos; T. Sajoto; A. Zrenner; M. Shayegan

doi:https://doi.org/10.1063/1.102377

Erratum: Effect of substrate temperature on migration of Si in planar-doped GaAs (Applied Physics Letters (1988) 53, (2504))

M. Santos, T. Sajoto, A. Zrenner, M. Shayegan

Princeton University

Research output: Contribution to journal › Comment/debate › peer-review

5 Scopus citations

Original language	American English
Number of pages	1
Journal	Applied Physics Letters
Volume	55
Issue number	6
DOIs	https://doi.org/10.1063/1.102377
State	Published - Dec 1 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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https://doi.org/10.1063/1.102377

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Erratum: Effect of substrate temperature on migration of Si in planar-doped GaAs (Applied Physics Letters (1988) 53, (2504))

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