Estimation of emissivity of a wafer in an RTP chamber by a dynamic observer

Sergey Belikov, David Hur, Bernard Friedland, N. M. Ravindra

Research output: Contribution to journalConference article

Abstract

A method of estimation of wavelength-dependent emissivity of silicon wafers using thermocouple measurements is presented here. A dynamic observer and a persistent excitation of the lamps are required for convergence of the observer's estimates to the actual values of parameters for emissivity approximation. A TI designed RTP equipment and adaptive close-loop temperature control have been used to generate the required persistent excitation. Theory of emissivity estimation by this method has been developed and illustrated by experiment with this 3-zone RTP system.

Original languageEnglish (US)
Pages (from-to)335-340
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume429
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

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