Evaluation of ohmic contacts to P-type 6H-SiC created by C and Al coimplantation

Jian H. Zhao, Kiyoshi Tone, Stephen R. Weiner, Maria A. Caleca, Honghua Du, Stephen P. Withrow

Research output: Contribution to journalReview article

32 Scopus citations

Abstract

A comparative study of specific contact resistance and sheet resistivity of p-type 6H-SiC created by Al implantation only and by C and Al coimplantation into n - -6H-SiC epilayer grown on n + -6H-SiC has been performed to address the challenging issue of ohmic contacts to the anode of SiC thyristors and other thyristor-based advanced devices. Direct experimental evidence has been obtained which shows the obvious advantage of C and Al coimplantation in terms of contact resistance and sheet resistivity. Under our experimental conditions, it is found that the specific contact resistance can be reduced by three orders of magnitude and the sheet resistivity can be improved by a factor of 6 when C and Al are coimplanted into 6H-SiC.

Original languageEnglish (US)
Pages (from-to)375-377
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number8
DOIs
StatePublished - Aug 1 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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