Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

V. Yu Timoshenko, O. A. Shalygina, M. G. Lisachenko, P. K. Kashkarov, D. Kovalev, J. Heitmann, M. Zacharias, B. V. Kamenev, L. Tsybeskov

Research output: Contribution to journalConference article

Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

Original languageEnglish (US)
Pages (from-to)227-232
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume789
DOIs
StatePublished - Jan 1 2003
EventQuantum Dots, Nanoparticles and Nanowires - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

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    Timoshenko, V. Y., Shalygina, O. A., Lisachenko, M. G., Kashkarov, P. K., Kovalev, D., Heitmann, J., Zacharias, M., Kamenev, B. V., & Tsybeskov, L. (2003). Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures. Materials Research Society Symposium - Proceedings, 789, 227-232. https://doi.org/10.1557/proc-789-n11.2