Fabrication of 20 nm embedded longitudinal nanochannels transferred from metal nanowire patterns

Daniel S. Choi, Eui Hyeok Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we propose a technique of fabricating nanometer-scale channels embedded by dielectric materials. Longitudinal "embedded" nanochannels with an opening size 20 nm × 80 nm have been successfully fabricated on silicon wafer by sacrificial etching nanowire structures.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages59-61
Number of pages3
StatePublished - 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume3

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

ASJC Scopus subject areas

  • General Engineering

Keywords

  • Focused ion beam
  • Nanochannels
  • Sacrificial etching

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