Formation of SiO at Si/SiO2 interface and its influence on transport of group V dopants and Ge in SiO2

G. K. Celler, L. E. Trimble

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Precipitation of impurities implanted into SiO2 and their drift in a temperature gradient are described. It is shown that thermomigration of dopant-rich clusters in SiO2 is catalytically controlled by a flux of SiO that is generated at the Si/SiO2 interface. Formation of SiO is confirmed by observations of thermally driven dissolution of thin encapsulated Si films adjacent to SiO2. Although the effects of thermomigration and the presence of SiO in oxide are most significant above 1200°C, dopant segregation and associated with it lack of diffusion extend to lower temperatures that are commonly used in silicon device processing.

Original languageEnglish (US)
Pages (from-to)245-258
Number of pages14
JournalApplied Surface Science
Issue number1-4
StatePublished - Oct 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces, Coatings and Films
  • Chemistry(all)
  • Surfaces and Interfaces


Dive into the research topics of 'Formation of SiO at Si/SiO<sub>2</sub> interface and its influence on transport of group V dopants and Ge in SiO<sub>2</sub>'. Together they form a unique fingerprint.

Cite this