Frequency and area dependence of High-K/Ge MOS capacitors

I. Mitevski, D. Misra, M. N. Bhuyian, Y. Ding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper investigates the capacitance-voltage (C-V) measurements of Ge/A12O3/ZrO2/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (Cc) for accumulation region is dependent on frequency, devices substrate and area. Cc increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of Cc per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.

Original languageEnglish (US)
Title of host publicationSelected Proceedings from the 231st ECS Meeting New Orleans, LA - Spring 2017
PublisherElectrochemical Society Inc.
Pages1977-1984
Number of pages8
Edition11
ISBN (Electronic)9781607688174
ISBN (Print)9781623324605
DOIs
StatePublished - 2017
Event231st ECS Meeting - New Orleans, United States
Duration: May 28 2017Jun 1 2017

Publication series

NameECS Transactions
Number11
Volume77

Other

Other231st ECS Meeting
Country/TerritoryUnited States
CityNew Orleans
Period5/28/176/1/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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