Abstract
Silicon-on-insulator (SOI) technology has greatly advanced in the last decade. Although initially driven by the need for radiation-hard devices, its benefits include higher operating speeds, denser packing, simpler design, elimination of latchup, and tolerance of high temperatures. SOI wafers fabricated by synthesis of buried SiO2 through high dose oxygen implantation provide the best performance. This technology, known as SIMOX for Separation by IMplanted OXygen, has allowed making the fastest Si CMOS circuits, operating at 6.2GHz, and radiation-hard 64K SRAMs with a short access time. Since benefits of dielectric isolation increase with the shrinkage of device dimensions, SOI should have a major impact on the future of Si technology and SIMOX wafers may become as common as epi wafers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 472-485 |
| Number of pages | 14 |
| Journal | Proceedings - The Electrochemical Society |
| Volume | 90 |
| Issue number | 7 |
| State | Published - 1990 |
| Externally published | Yes |
| Event | Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology - Montreal, Que, Can Duration: May 7 1990 → May 11 1990 |
All Science Journal Classification (ASJC) codes
- General Engineering