Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

P. Srinivasan, E. Simoen, R. Singanamalla, H. Y. Yu, C. Claeys, Durgamadhab Misra

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The defects related to the gate-dielectric in high-κ-MOSFETs are studied using the 1/f noise technique. Three different types of gate electrodes were used for this purpose - poly-Si, metal (TiN/TaN) and fully Ni Silicided (FUSI) electrodes with Hf-based oxides as the gate dielectric layer. All the three types of devices show a specific behavior near the gate electrode-dielectric interface when the trap profiles are assessed using f × SI spectra. The tunneling depths were calculated and it was found that the high-κ oxide (bulk) layers are being probed. From the drain current spectra SI vs. drain current ID of the various gate material devices at given depths, it may be inferred that the concentration of oxygen-vacancy-related defects can significantly influence the 1/f noise performance, which can explain the differences observed in noise between the gate electrodes. Comparison of FUSI gated devices, with various percentages of Hf in the dielectric layer, shows comparable noise levels (SVG), indicating a minor dependence on Hf-content in the gate dielectric layer.

Original languageEnglish (US)
Pages (from-to)992-998
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number6
DOIs
StatePublished - Jun 1 2006

Fingerprint

Gate dielectrics
field effect transistors
low frequencies
Electrodes
electrodes
Drain current
Oxides
International System of Units
Defects
Oxygen vacancies
Polysilicon
Metals
oxides
defects
traps
oxygen
profiles
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Srinivasan, P. ; Simoen, E. ; Singanamalla, R. ; Yu, H. Y. ; Claeys, C. ; Misra, Durgamadhab. / Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics. In: Solid-State Electronics. 2006 ; Vol. 50, No. 6. pp. 992-998.
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Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics. / Srinivasan, P.; Simoen, E.; Singanamalla, R.; Yu, H. Y.; Claeys, C.; Misra, Durgamadhab.

In: Solid-State Electronics, Vol. 50, No. 6, 01.06.2006, p. 992-998.

Research output: Contribution to journalArticle

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