Glide of basal plane dislocations during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor

Gan Feng, Wei Ning Qian, Yong Qiang Sun, Zhixia Chen, Jian Hui Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The glide of basal plane dislocations (BPDs) during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor is characterized, and its formation mechanisms are discussed. The reason for the glide of BPDs during 150 mm 4H-SiC epitaxial growth is believed to be due to the strain related to the strain originally in the 150 mm substrate and the strain generated during the epitaxial growth. After the epitaxial growth process is optimized, it is possible to suppress the glide of BPDs, as a result of the effective relaxation of the strain.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials, 2017
EditorsRobert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis
PublisherTrans Tech Publications Ltd
Pages80-83
Number of pages4
ISBN (Print)9783035711455
DOIs
StatePublished - Jan 1 2018
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States
Duration: Sep 17 2017Sep 22 2017

Publication series

NameMaterials Science Forum
Volume924 MSF

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2017
CountryUnited States
CityColumbia
Period9/17/179/22/17

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

Keywords

  • 150 mm substrates
  • 4H-SiC epitaxial growth
  • Basal plane dislocations
  • Glide
  • Hot-wall reactor

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  • Cite this

    Feng, G., Qian, W. N., Sun, Y. Q., Chen, Z., & Zhao, J. H. (2018). Glide of basal plane dislocations during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor. In R. Stahlbush, P. Neudeck, A. Bhalla, R. P. Devaty, M. Dudley, & A. Lelis (Eds.), Silicon Carbide and Related Materials, 2017 (pp. 80-83). (Materials Science Forum; Vol. 924 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.924.80