Growth and structural analysis of metalorganic chemical vapor deposited (112̄0) MgxZn1-xO (0<x<0.33) films on (011̄2) R-plane Al2O3 substrates

S. Muthukumar; J. Zhong; Y. Chen; Y. Lu; T. Siegrist

doi:10.1063/1.1541950

Growth and structural analysis of metalorganic chemical vapor deposited (112̄0) Mg_xZn_1-xO (0<x<0.33) films on (011̄2) R-plane Al₂O₃ substrates

S. Muthukumar
, J. Zhong
, Y. Chen
, Y. Lu
, T. Siegrist

School of Engineering, Electrical & Computer Engineering

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

The growth and structural analysis of metalorganic chemical vapor deposition (MOCVD) of Mg_xZn_1-x (0<x<0.33) thin films on R-plane Al₂O₃ substrates were discussed. It was suggested that the system was useful for designing polarization sensitive devices operating in the UV range. It was found that a ZnO buffer layer with a minimum thickness of 50 Å was required to prevent the loss of wurtzite-type crystal structure in the films.

Original language	American English
Pages (from-to)	742-744
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	5
DOIs	https://doi.org/10.1063/1.1541950
State	Published - Feb 3 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The growth and structural analysis of metalorganic chemical vapor deposition (MOCVD) of MgxZn1-x (02O3 substrates were discussed. It was suggested that the system was useful for designing polarization sensitive devices operating in the UV range. It was found that a ZnO buffer layer with a minimum thickness of 50 {\AA} was required to prevent the loss of wurtzite-type crystal structure in the films.",

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AU - Lu, Y.

AU - Siegrist, T.

PY - 2003/2/3

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AB - The growth and structural analysis of metalorganic chemical vapor deposition (MOCVD) of MgxZn1-x (02O3 substrates were discussed. It was suggested that the system was useful for designing polarization sensitive devices operating in the UV range. It was found that a ZnO buffer layer with a minimum thickness of 50 Å was required to prevent the loss of wurtzite-type crystal structure in the films.

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Growth and structural analysis of metalorganic chemical vapor deposited (112̄0) Mg_xZn_1-xO (0<x<0.33) films on (011̄2) R-plane Al₂O₃ substrates

Abstract

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