Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO_x by catalyst-free molecular beam epitaxy

TY - JOUR

T1 - Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

AU - Zhao, S.

AU - Kibria, M. G.

AU - Wang, Q.

AU - Nguyen, H. P.T.

AU - Mi, Z.

PY - 2013/6/21

Y1 - 2013/6/21

N2 - The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.

AB - The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.

UR - https://www.scopus.com/pages/publications/84878718269

UR - https://www.scopus.com/pages/publications/84878718269#tab=citedBy

U2 - 10.1039/c3nr00387f

DO - 10.1039/c3nr00387f

M3 - Article

C2 - 23661186

SN - 2040-3364

VL - 5

SP - 5283

EP - 5287

JO - Nanoscale

JF - Nanoscale

IS - 12

ER -