High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

H. P.T. Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
PublisherIEEE Computer Society
ISBN (Print)9781557529107
DOIs
StatePublished - 2011
Externally publishedYes

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Nguyen, H. P. T., Zhang, S., Cui, K., Han, X., & Mi, Z. (2011). High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 [5950325] (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). IEEE Computer Society. https://doi.org/10.1364/cleo_si.2011.cmu4