High frequency switching of SiC high voltage LJFET

Kuang Sheng, Yongxi Zhang, Ming Su, Liangchun Yu, Jian H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, inductive-load switching of a high voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high frequency, high temperature applications. A new 'capacitor-coupled' gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the SiC HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperatureindependent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3MHz, 200V, 1.2A and 250°C with good efficiency, significantly higher than silicon devices with similar voltage ratings.

Original languageEnglish (US)
Title of host publicationISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
Pages229-232
Number of pages4
DOIs
StatePublished - 2008
EventISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's - Orlando, FL, United States
Duration: May 18 2008May 22 2008

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs

Other

OtherISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Country/TerritoryUnited States
CityOrlando, FL
Period5/18/085/22/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • High frequency
  • Junction field-effect transistor (JFET)
  • Power integrated circuits
  • Silicon carbide (SiC)

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