High-mobility field-effect transistors based on transition metal dichalcogenides

TY - JOUR

T1 - High-mobility field-effect transistors based on transition metal dichalcogenides

AU - Podzorov, V.

AU - Gershenson, M. E.

AU - Kloc, Ch

AU - Zeis, R.

AU - Bucher, E.

PY - 2004/4/26

Y1 - 2004/4/26

N2 - Field-effect transistors (FET) based on transition metal dichalcogenides (TMD) were fabricated. The fabrication of the FET with intrinsically low field-effect threshold and high charge carrier mobility was possible due to the unique structure of single crystals of these layered inorganic semiconductors. Ambipolar operation is demonstrated by the FETs. The combination of the electrical properties and mechanical flexibility make the TBD based field-effect transistors an attractive option for flexible electronics.

AB - Field-effect transistors (FET) based on transition metal dichalcogenides (TMD) were fabricated. The fabrication of the FET with intrinsically low field-effect threshold and high charge carrier mobility was possible due to the unique structure of single crystals of these layered inorganic semiconductors. Ambipolar operation is demonstrated by the FETs. The combination of the electrical properties and mechanical flexibility make the TBD based field-effect transistors an attractive option for flexible electronics.

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U2 - https://doi.org/10.1063/1.1723695

DO - https://doi.org/10.1063/1.1723695

M3 - Article

VL - 84

SP - 3301

EP - 3303

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -