High-mobility field-effect transistors based on transition metal dichalcogenides

V. Podzorov, M. E. Gershenson, Ch Kloc, R. Zeis, E. Bucher

Research output: Contribution to journalArticlepeer-review

417 Scopus citations

Abstract

Field-effect transistors (FET) based on transition metal dichalcogenides (TMD) were fabricated. The fabrication of the FET with intrinsically low field-effect threshold and high charge carrier mobility was possible due to the unique structure of single crystals of these layered inorganic semiconductors. Ambipolar operation is demonstrated by the FETs. The combination of the electrical properties and mechanical flexibility make the TBD based field-effect transistors an attractive option for flexible electronics.

Original languageEnglish (US)
Pages (from-to)3301-3303
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
StatePublished - Apr 26 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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