High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis, Russell J. Holmes, I. Chun Cheng, Ke Long, James Christopher Sturm, Stephen R. Forrest, Sigurd Wagner

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

Original languageEnglish (US)
Pages (from-to)49-51
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number1
DOIs
StatePublished - Jan 1 2006

Fingerprint

Nanocrystalline silicon
Thin film transistors
Transistors
Plastics
Substrates
Electron mobility
Transconductance
Silicon
Plasma enhanced chemical vapor deposition
Metal foil
Glass
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kattamis, A. Z., Holmes, R. J., Cheng, I. C., Long, K., Sturm, J. C., Forrest, S. R., & Wagner, S. (2006). High mobility nanocrystalline silicon transistors on clear plastic substrates. IEEE Electron Device Letters, 27(1), 49-51. https://doi.org/10.1109/LED.2005.861256
Kattamis, Alex Z. ; Holmes, Russell J. ; Cheng, I. Chun ; Long, Ke ; Sturm, James Christopher ; Forrest, Stephen R. ; Wagner, Sigurd. / High mobility nanocrystalline silicon transistors on clear plastic substrates. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 1. pp. 49-51.
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Kattamis, AZ, Holmes, RJ, Cheng, IC, Long, K, Sturm, JC, Forrest, SR & Wagner, S 2006, 'High mobility nanocrystalline silicon transistors on clear plastic substrates', IEEE Electron Device Letters, vol. 27, no. 1, pp. 49-51. https://doi.org/10.1109/LED.2005.861256

High mobility nanocrystalline silicon transistors on clear plastic substrates. / Kattamis, Alex Z.; Holmes, Russell J.; Cheng, I. Chun; Long, Ke; Sturm, James Christopher; Forrest, Stephen R.; Wagner, Sigurd.

In: IEEE Electron Device Letters, Vol. 27, No. 1, 01.01.2006, p. 49-51.

Research output: Contribution to journalArticle

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