High performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

Xiaobin Xin, Jun Hu, Petre Alexandov, Jian H. Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael Myers-Ward, Charles Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


A 4H-SiC SPAD with an off-mesa bonding pad operating at 280nm is presented in this paper, with a low dark count rate of 14kHz and 27kHz at single photon detection efficiency of 1.9% and 2.6%, respectively. The device has a low breakdown voltage of 117V and a low dark current of 17fA, 49fA and 147fA at 50%, 90%, and 95% of breakdown voltage, respectively. The quantum efficiency is measured to be 28% (32%) at 280nm (270nm) with a UV to visible rejection ratio >1400 (>1600).

Original languageEnglish (US)
Title of host publicationAdvanced Photon Counting Techniques II
StatePublished - 2007
EventAdvanced Photon Counting Techniques II - Boston, MA, United States
Duration: Sep 9 2007Sep 11 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering


OtherAdvanced Photon Counting Techniques II
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Applied Mathematics
  • Electrical and Electronic Engineering
  • Computer Science Applications


  • Avalanche
  • Dark count
  • Detection efficiency
  • Quantum efficiency
  • SPAD
  • Single photon counting
  • Solar blind


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