High performance quantum cascade lasers grown by MOCVD with/without lateral regrowth

Z. Liu, D. Wasserman, S. S. Howard, A. J. Hoffman, Claire F. Gmachl, X. Wang, T. Tanbun-Ek, L. Cheng, F. S. Choa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on room temperature, continuous wave operated Quantum Cascade lasers emitting around 8 μm wavelength. The lasers were grown by metal organic chemical vapor deposition. Lasers with and without lateral regrowth are compared. A continuous-wave output power ∼ 5 mW is measured at 300 K for a metal-clad laser, and 30 mW for the buried heterostructure laser. The measured gain at room temperature is close to the theoretical design, which enables the lasers to overcome the still high waveguide loss.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages519-520
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period7/24/067/28/06

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Keywords

  • Mid-infrared
  • Quantum cascade lasers
  • Semiconductor lasers

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