High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors

Y. Chen, H. T. Yi, V. Podzorov

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


We describe a high resolving power technique for Hall-effect measurements, efficient in determining Hall mobility and carrier density in organic field-effect transistors and other low-mobility systems. We utilize a small low-frequency ac magnetic field (Brms<0.25 T) and a phase-sensitive (lock-in) detection of Hall voltage, with the necessary corrections for Faraday induction. This method significantly enhances the signal-to-noise ratio and eliminates the necessity of using high magnetic fields in Hall-effect studies. With the help of this method, we are able to obtain the Hall mobility and carrier density in organic transistors with a mobility as low as μ∼0.3 cm2 V-1 s-1 by using a compact desktop apparatus and low magnetic fields. We find a good agreement between Hall-effect and electric-field-effect measurements, indicating that, contrary to the common belief, certain organic semiconductors with mobilities below 1 cm2 V-1 s-1 can still exhibit a fully developed, band-semiconductor-like Hall effect, with the Hall mobility and carrier density matching those obtained in longitudinal transistor measurements. This suggests that, even when μ<1 cm2 V-1 s-1, charges in organic semiconductors can still behave as delocalized coherent carriers. This technique paves the way to ubiquitous Hall-effect studies in a wide range of low-mobility materials and devices, where it is typically very difficult to resolve the Hall effect even in very high dc magnetic fields.

Original languageEnglish (US)
Article number034008
JournalPhysical Review Applied
Issue number3
StatePublished - Mar 17 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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