III-Nitride nanowire optoelectronics

Songrui Zhao, Hieu P.T. Nguyen, Md G. Kibria, Zetian Mi

Research output: Contribution to journalReview articlepeer-review

126 Scopus citations


Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

Original languageAmerican English
Pages (from-to)14-68
Number of pages55
JournalProgress in Quantum Electronics
StatePublished - Nov 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Statistical and Nonlinear Physics
  • Electrical and Electronic Engineering


  • AlN
  • GaN
  • InN
  • LED
  • Laser
  • Nanowire
  • Optoelectronics
  • Photodetector
  • Photosynthesis
  • Si photonics
  • Solar cell
  • Solar fuel
  • Solar hydrogen
  • Water splitting


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