Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

F. Crupi, P. Srinivasan, P. Magnone, E. Simoen, C. Pace, Durgamadhab Misra, C. Claeys

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.

Original languageEnglish (US)
Pages (from-to)688-691
Number of pages4
JournalIEEE Electron Device Letters
Volume27
Issue number8
DOIs
StatePublished - Aug 1 2006

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Gate dielectrics
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Crupi, F. ; Srinivasan, P. ; Magnone, P. ; Simoen, E. ; Pace, C. ; Misra, Durgamadhab ; Claeys, C. / Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 8. pp. 688-691.
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Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks. / Crupi, F.; Srinivasan, P.; Magnone, P.; Simoen, E.; Pace, C.; Misra, Durgamadhab; Claeys, C.

In: IEEE Electron Device Letters, Vol. 27, No. 8, 01.08.2006, p. 688-691.

Research output: Contribution to journalArticle

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T1 - Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

AU - Crupi, F.

AU - Srinivasan, P.

AU - Magnone, P.

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AU - Pace, C.

AU - Misra, Durgamadhab

AU - Claeys, C.

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AB - The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-κ layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.

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