Influence of impurities on stacking fault dynamics in SiC under external loading

Vladislav Domnich; Richard A. Haber

doi:10.1002/9780470944004.ch19

Influence of impurities on stacking fault dynamics in SiC under external loading

Vladislav Domnich, Richard A. Haber

School of Engineering, Materials Science & Engineering

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The effect of additives (Al, B, N, O) on stacking fault (SF) dynamics in 3C, 2H, 4H, and 6H silicon carbide (SiC) polytypes under external loading is investigated using a combination of an axial next-nearest-neighbor Ising model and single-point energy calculations within the scheme of density-functional theory. Both hydrostatic pressure and pure shear stress are considered. Additives are considered as point defects substituting for either Si or C atoms in the SiC structure. The results of the simulations imply that the (3111) SF in 6H SiC has the highest energy of all possible stacking faults among the SiC polytypes considered. To various degrees, aluminum, nitrogen, and oxygen are found to facilitate SF induced plasticity in SiC The role of additives in promoting plastic deformation in SiC in a wider pressure range is discussed.

Original language	American English
Title of host publication	Advances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC
Publisher	American Ceramic Society
Pages	221-229
Number of pages	9
Edition	5
ISBN (Print)	9780470594704
DOIs	https://doi.org/10.1002/9780470944004.ch19
State	Published - 2010

Publication series

Name	Ceramic Engineering and Science Proceedings
Number	5
Volume	31

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1002/9780470944004.ch19

Cite this

Domnich, V., & Haber, R. A. (2010). Influence of impurities on stacking fault dynamics in SiC under external loading. In Advances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC (5 ed., pp. 221-229). (Ceramic Engineering and Science Proceedings; Vol. 31, No. 5). American Ceramic Society. https://doi.org/10.1002/9780470944004.ch19

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abstract = "The effect of additives (Al, B, N, O) on stacking fault (SF) dynamics in 3C, 2H, 4H, and 6H silicon carbide (SiC) polytypes under external loading is investigated using a combination of an axial next-nearest-neighbor Ising model and single-point energy calculations within the scheme of density-functional theory. Both hydrostatic pressure and pure shear stress are considered. Additives are considered as point defects substituting for either Si or C atoms in the SiC structure. The results of the simulations imply that the (3111) SF in 6H SiC has the highest energy of all possible stacking faults among the SiC polytypes considered. To various degrees, aluminum, nitrogen, and oxygen are found to facilitate SF induced plasticity in SiC The role of additives in promoting plastic deformation in SiC in a wider pressure range is discussed.",

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Domnich, V & Haber, RA 2010, Influence of impurities on stacking fault dynamics in SiC under external loading. in Advances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC. 5 edn, Ceramic Engineering and Science Proceedings, no. 5, vol. 31, American Ceramic Society, pp. 221-229. https://doi.org/10.1002/9780470944004.ch19

Influence of impurities on stacking fault dynamics in SiC under external loading. / Domnich, Vladislav; Haber, Richard A.
Advances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC. 5. ed. American Ceramic Society, 2010. p. 221-229 (Ceramic Engineering and Science Proceedings; Vol. 31, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Domnich V, Haber RA. Influence of impurities on stacking fault dynamics in SiC under external loading. In Advances in Ceramic Armor VI - A Collection of Papers Presented at the 34th International Conference on Advanced Ceramics and Composites, ICACC. 5 ed. American Ceramic Society. 2010. p. 221-229. (Ceramic Engineering and Science Proceedings; 5). doi: 10.1002/9780470944004.ch19

Influence of impurities on stacking fault dynamics in SiC under external loading

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