Abstract
Passivation of interfaces such as Si/SiO 2 and Si/HfO 2 (Si/high-k) by deuterium instead of hydrogen is getting significant attention for scaled CMOS devices. This paper introduces the various methods of deuterium incorporation at the interface including thermal annealing and deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. In case of annealing thermal budget is a limiting factor whereas for implantation, energy and implantation dose significantly influence the interface passivation. Interface passivation by hydrogen and deuterium implantation is discussed. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.
| Original language | American English |
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| Pages | 792-797 |
| Number of pages | 6 |
| State | Published - 2004 |
| Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004 |
Conference
| Conference | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
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| Country/Territory | China |
| City | Beijing |
| Period | 10/18/04 → 10/21/04 |
ASJC Scopus subject areas
- General Engineering