Interface properties of ZnO nanotips grown on Si substrates

H. Chen, J. Zhong, G. Saraf, Y. Lu, D. H. Hill, S. T. Hsu, Y. Ono

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


ZnO nanotips have been grown on Si (100) using metalorganic chemical vapor deposition (MOCVD). The growth temperature is optimized for good crystallinity, morphology, and optical properties. ZnO nanotips exhibit a strong near band edge emission of ∼376 nm at room temperature with negligible green band emission. Pregrowth substrate treatment using diluted hydrofluoric acid (HF) and minimized oxygen exposure before the initial growth significantly reduces the interfacial SiO 2 thickness, while maintaining good morphology. An n-ZnO nanotips/p-Si diode is fabricated and its I-V characteristic is measured. The threshold voltage of the diode is found to be below 2.0 V with small reverse leakage current. The ZnO/p-Si diodes provide the possibility of integrating the ZnO nanotips with Si-based electronic devices.

Original languageEnglish (US)
Pages (from-to)1241-1245
Number of pages5
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Metalorganic chemical vapor deposition (MOCVD)
  • ZnO
  • ZnO nanostructure
  • ZnO/Si heterojunction


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