Intrinsic band-edge photoluminescence from silicon clusters at room temperature

Leonid Tsybeskov, K. Moore, D. Hall

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than (Formula presented) in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.

Original languageEnglish (US)
Pages (from-to)R8361-R8364
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number12
DOIs
StatePublished - Jan 1 1996
Externally publishedYes

Fingerprint

Silicon
Photoluminescence
Quantum efficiency
photoluminescence
quantum efficiency
silicon
room temperature
Thermooxidation
Porous silicon
Silicon oxides
porous silicon
silicon oxides
Temperature
Photons
Annealing
oxidation
annealing
temperature
photons
matrices

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Intrinsic band-edge photoluminescence from silicon clusters at room temperature. / Tsybeskov, Leonid; Moore, K.; Hall, D.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 12, 01.01.1996, p. R8361-R8364.

Research output: Contribution to journalArticle

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