@inproceedings{350e6d5184874f3e9c80f01a584fc75d,
title = "Investigation of electrically active defects in n-CdS/p-CdTe solar cells",
abstract = "Current-voltage (J-V) and Capacitance-voltage (C-V) measurements of diode devices at different temperatures and illumination intensities are used to provide valuable information about non-idealities in the pn semiconductor junction and metal-semiconductor junction. In principle, continuous monitoring of this information can be used to improve diode and solar cell performance. In this paper we characterize the n+p CdTe on CdS solar cell. The activation energy derived from the temperature dependence of our solar cell J-V curves is consistent with trap assisted tunneling being the dominant carrier transport mechanism in the pn junction. Interpretation is complicated in the particular case of thin-film CdTe, by multiple non-shallow (not fully ionized) {"}doping{"} energy levels in the CdTe band gap are in reality, which are not distinct from {"}trap{"} energy levels. We use C-V profiling to further understand the concentrations of recombination centers as well as the interplay of the double acceptor Cd vacancy and the non- shallow acceptor Cu substitute of Cd.",
author = "P. Kharangarh and D. Misra and Georgiou, {G. E.} and Chin, {K. K.}",
year = "2011",
doi = "10.1149/1.3628630",
language = "American English",
isbn = "9781566779043",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "233--240",
booktitle = "Photovoltaics for the 21st Century 7",
edition = "4",
note = "Photovoltaics for the 21st Century 7 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}