Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

C. Yuan, T. Salagaj, A. Gurary, A. G. Thompson, W. Kroll, R. A. Stall, C. Y. Hwang, M. Schurman, Y. Li, W. E. Mayo, Yicheng Lu, S. Krishnankutty, I. K. Shmagin, R. M. Kolbas, S. J. Pearton

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Abstract

n- and p-doped GaN thin films have been epitaxially grown on c-sapphire substrates by metal-organic chemical-vapor deposition in a production scale multiwafer-rotating-disk reactor. The in situ doping was performed with material having a low background carrier concentration of n approx. mid-1016 cm-3. Biscyclopentadienyl magnesium (Cp2Mg) and disilane (Si2H6) were used as the precursors for the p and n dopants, Mg and Si, respectively. The effect of mole flow on material, electrical, and optical properties was studied. We observed that both n- and p-type doped GaN exhibited an excellent surface morphology, even with a high mole flow of doping precursors. After the Mg-doped GaN was annealed in a N2 ambient at approx.700°C for 30-60 min, the highly resistive GaN was converted into p-type GaN with a low resistance of 0.1-1.0 Ω cm. Transmission electron microscopy showed that the defect density on the annealed Mg-doped GaN is only 4 × 109 cm-2 which is of the same order as undoped GaN (1.5 × 109 cm-2). One of the best p-GaN samples has a Hall carrier concentration of 5.2 × 1018 cm-3 and a hole mobility of 20 cm2/V s, which are the best values reported in the literature to date. The photoluminescence spectra of p-GaN show a strong band edge at 430 nm with a full width at half-maximum of 300 meV at room temperature.

Original languageEnglish (US)
Pages (from-to)2075-2080
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number5
DOIs
StatePublished - Sep 1 1995
Externally publishedYes

Fingerprint

rotating disks
Rotating disks
Epitaxial growth
reactors
Doping (additives)
Carrier concentration
low resistance
hole mobility
metalorganic chemical vapor deposition
magnesium
sapphire
Hole mobility
Defect density
electrical properties
Organic chemicals
Full width at half maximum
photoluminescence
optical properties
Sapphire
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Yuan, C. ; Salagaj, T. ; Gurary, A. ; Thompson, A. G. ; Kroll, W. ; Stall, R. A. ; Hwang, C. Y. ; Schurman, M. ; Li, Y. ; Mayo, W. E. ; Lu, Yicheng ; Krishnankutty, S. ; Shmagin, I. K. ; Kolbas, R. M. ; Pearton, S. J. / Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995 ; Vol. 13, No. 5. pp. 2075-2080.
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title = "Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor",
abstract = "n- and p-doped GaN thin films have been epitaxially grown on c-sapphire substrates by metal-organic chemical-vapor deposition in a production scale multiwafer-rotating-disk reactor. The in situ doping was performed with material having a low background carrier concentration of n approx. mid-1016 cm-3. Biscyclopentadienyl magnesium (Cp2Mg) and disilane (Si2H6) were used as the precursors for the p and n dopants, Mg and Si, respectively. The effect of mole flow on material, electrical, and optical properties was studied. We observed that both n- and p-type doped GaN exhibited an excellent surface morphology, even with a high mole flow of doping precursors. After the Mg-doped GaN was annealed in a N2 ambient at approx.700°C for 30-60 min, the highly resistive GaN was converted into p-type GaN with a low resistance of 0.1-1.0 Ω cm. Transmission electron microscopy showed that the defect density on the annealed Mg-doped GaN is only 4 × 109 cm-2 which is of the same order as undoped GaN (1.5 × 109 cm-2). One of the best p-GaN samples has a Hall carrier concentration of 5.2 × 1018 cm-3 and a hole mobility of 20 cm2/V s, which are the best values reported in the literature to date. The photoluminescence spectra of p-GaN show a strong band edge at 430 nm with a full width at half-maximum of 300 meV at room temperature.",
author = "C. Yuan and T. Salagaj and A. Gurary and Thompson, {A. G.} and W. Kroll and Stall, {R. A.} and Hwang, {C. Y.} and M. Schurman and Y. Li and Mayo, {W. E.} and Yicheng Lu and S. Krishnankutty and Shmagin, {I. K.} and Kolbas, {R. M.} and Pearton, {S. J.}",
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Yuan, C, Salagaj, T, Gurary, A, Thompson, AG, Kroll, W, Stall, RA, Hwang, CY, Schurman, M, Li, Y, Mayo, WE, Lu, Y, Krishnankutty, S, Shmagin, IK, Kolbas, RM & Pearton, SJ 1995, 'Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 5, pp. 2075-2080. https://doi.org/10.1116/1.588080

Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor. / Yuan, C.; Salagaj, T.; Gurary, A.; Thompson, A. G.; Kroll, W.; Stall, R. A.; Hwang, C. Y.; Schurman, M.; Li, Y.; Mayo, W. E.; Lu, Yicheng; Krishnankutty, S.; Shmagin, I. K.; Kolbas, R. M.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 5, 01.09.1995, p. 2075-2080.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

AU - Yuan, C.

AU - Salagaj, T.

AU - Gurary, A.

AU - Thompson, A. G.

AU - Kroll, W.

AU - Stall, R. A.

AU - Hwang, C. Y.

AU - Schurman, M.

AU - Li, Y.

AU - Mayo, W. E.

AU - Lu, Yicheng

AU - Krishnankutty, S.

AU - Shmagin, I. K.

AU - Kolbas, R. M.

AU - Pearton, S. J.

PY - 1995/9/1

Y1 - 1995/9/1

N2 - n- and p-doped GaN thin films have been epitaxially grown on c-sapphire substrates by metal-organic chemical-vapor deposition in a production scale multiwafer-rotating-disk reactor. The in situ doping was performed with material having a low background carrier concentration of n approx. mid-1016 cm-3. Biscyclopentadienyl magnesium (Cp2Mg) and disilane (Si2H6) were used as the precursors for the p and n dopants, Mg and Si, respectively. The effect of mole flow on material, electrical, and optical properties was studied. We observed that both n- and p-type doped GaN exhibited an excellent surface morphology, even with a high mole flow of doping precursors. After the Mg-doped GaN was annealed in a N2 ambient at approx.700°C for 30-60 min, the highly resistive GaN was converted into p-type GaN with a low resistance of 0.1-1.0 Ω cm. Transmission electron microscopy showed that the defect density on the annealed Mg-doped GaN is only 4 × 109 cm-2 which is of the same order as undoped GaN (1.5 × 109 cm-2). One of the best p-GaN samples has a Hall carrier concentration of 5.2 × 1018 cm-3 and a hole mobility of 20 cm2/V s, which are the best values reported in the literature to date. The photoluminescence spectra of p-GaN show a strong band edge at 430 nm with a full width at half-maximum of 300 meV at room temperature.

AB - n- and p-doped GaN thin films have been epitaxially grown on c-sapphire substrates by metal-organic chemical-vapor deposition in a production scale multiwafer-rotating-disk reactor. The in situ doping was performed with material having a low background carrier concentration of n approx. mid-1016 cm-3. Biscyclopentadienyl magnesium (Cp2Mg) and disilane (Si2H6) were used as the precursors for the p and n dopants, Mg and Si, respectively. The effect of mole flow on material, electrical, and optical properties was studied. We observed that both n- and p-type doped GaN exhibited an excellent surface morphology, even with a high mole flow of doping precursors. After the Mg-doped GaN was annealed in a N2 ambient at approx.700°C for 30-60 min, the highly resistive GaN was converted into p-type GaN with a low resistance of 0.1-1.0 Ω cm. Transmission electron microscopy showed that the defect density on the annealed Mg-doped GaN is only 4 × 109 cm-2 which is of the same order as undoped GaN (1.5 × 109 cm-2). One of the best p-GaN samples has a Hall carrier concentration of 5.2 × 1018 cm-3 and a hole mobility of 20 cm2/V s, which are the best values reported in the literature to date. The photoluminescence spectra of p-GaN show a strong band edge at 430 nm with a full width at half-maximum of 300 meV at room temperature.

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DO - https://doi.org/10.1116/1.588080

M3 - Article

VL - 13

SP - 2075

EP - 2080

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 0734-211X

IS - 5

ER -