Investigation of progressive breakdown and non-Weibull failure distribution of high-k and SiO2 dielectric by ramp voltage stress

Nilufa Rahim, Ernest Y. Wu, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, the progressive breakdown (PBD) phase and non-Weibull final failure distributions of multi layer high-k and SiO2 gate dielectric were investigated by voltage ramp stress (VRS) technique. A new hybrid two-stage constant voltage stress/voltage ramp stress methodology was developed to exclusively evaluate the PBD phase. Then the VRS technique was applied to investigate the non-Weibull failure distribution at a specified current (I FAIL) with large sample-size (∼1000) experiments. An excellent agreement was achieved in both cases in comparison with the conventional CVS technique, thus demonstrates that VRS is an effective technique to replace the CVS technique for investigation of post-BD and non-Weibull statistics in both SiO2 and high-k dielectrics.

Original languageEnglish (US)
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
PagesGD.2.1-GD.2.6
DOIs
StatePublished - Jun 23 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • CVS
  • TDDB
  • VRS

Cite this

Rahim, N., Wu, E. Y., & Misra, D. (2011). Investigation of progressive breakdown and non-Weibull failure distribution of high-k and SiO2 dielectric by ramp voltage stress. In 2011 International Reliability Physics Symposium, IRPS 2011 (pp. GD.2.1-GD.2.6). [5784579] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2011.5784579