TY - GEN
T1 - Investigation of Self-Heating in ZnO Thin-Film Transistors by In-Situ Gate Resistance Measurement and Effect on Device Mobility Extraction
AU - Fata, Nicholas M.
AU - Ma, Yue
AU - Wagner, Sigurd
AU - Verma, Naveen
AU - Sturm, James C.
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Large-Area Electronics (LAE) consists of circuits and devices fabricated on large substrates for displays [1] and other applications [2 , 3]. The key LAE device is a bottom-gate thin-film transistor (TFT). On substrates with low thermal conductance, such as glass and plastics, operating a TFT will heat it, affecting carrier mobility, and may overheat it to thermal breakdown [ 4 - 6 ]. Here, we use the TFT gate electrode as a resistance thermometer [7] to measure the device temperature in-situ during operation. We also demonstrate a pulsed measurement technique in which we exploit self-heating to control the device temperature during measurement, which we use to extract effective mobility μeff as a function of device temperature, and characterize the impact of self-heating on μeff extracted from conventional measurements.
AB - Large-Area Electronics (LAE) consists of circuits and devices fabricated on large substrates for displays [1] and other applications [2 , 3]. The key LAE device is a bottom-gate thin-film transistor (TFT). On substrates with low thermal conductance, such as glass and plastics, operating a TFT will heat it, affecting carrier mobility, and may overheat it to thermal breakdown [ 4 - 6 ]. Here, we use the TFT gate electrode as a resistance thermometer [7] to measure the device temperature in-situ during operation. We also demonstrate a pulsed measurement technique in which we exploit self-heating to control the device temperature during measurement, which we use to extract effective mobility μeff as a function of device temperature, and characterize the impact of self-heating on μeff extracted from conventional measurements.
UR - http://www.scopus.com/inward/record.url?scp=85201057012&partnerID=8YFLogxK
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U2 - 10.1109/DRC61706.2024.10605458
DO - 10.1109/DRC61706.2024.10605458
M3 - Conference contribution
T3 - Device Research Conference - Conference Digest, DRC
BT - DRC 2024 - 82nd Device Research Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 82nd Device Research Conference, DRC 2024
Y2 - 24 June 2024 through 26 June 2024
ER -