Layer Ordering and Faulting in (GaAs)n/(AlAs)n Ultrashort-Period Superlattices

J. H. Li; S. C. Moss; Y. Zhang; A. Mascarenhas; L. N. Pfeiffer; K. W. West; W. K. Ge; J. Bai

Layer Ordering and Faulting in (GaAs)_n/(AlAs)_n Ultrashort-Period Superlattices

J. H. Li
, S. C. Moss
, Y. Zhang
, A. Mascarenhas
, L. N. Pfeiffer
, K. W. West
, W. K. Ge
, J. Bai

Research output: Contribution to journal › Article › peer-review

Abstract

The layer ordering and faulting in (GaAs)_n/(AlAs)_n ultrashort-period superlattices was studied by using synchrotron x-ray scattering method. The effect of growth interruption on the interfacial structure was also discussed. It was found that the interfaces of these superlattices contain features on two different length scales namely random atomic mixture and ordered mesoscopic domains.

Original language	American English
Article number	106103
Pages (from-to)	1061031-1061034
Number of pages	4
Journal	Physical review letters
Volume	91
Issue number	10
State	Published - Sep 5 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Layer Ordering and Faulting in (GaAs)n/(AlAs)n Ultrashort-Period Superlattices",

abstract = "The layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices was studied by using synchrotron x-ray scattering method. The effect of growth interruption on the interfacial structure was also discussed. It was found that the interfaces of these superlattices contain features on two different length scales namely random atomic mixture and ordered mesoscopic domains.",

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T1 - Layer Ordering and Faulting in (GaAs)n/(AlAs)n Ultrashort-Period Superlattices

AU - Li, J. H.

AU - Moss, S. C.

AU - Zhang, Y.

AU - Mascarenhas, A.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Ge, W. K.

AU - Bai, J.

PY - 2003/9/5

Y1 - 2003/9/5

N2 - The layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices was studied by using synchrotron x-ray scattering method. The effect of growth interruption on the interfacial structure was also discussed. It was found that the interfaces of these superlattices contain features on two different length scales namely random atomic mixture and ordered mesoscopic domains.

AB - The layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices was studied by using synchrotron x-ray scattering method. The effect of growth interruption on the interfacial structure was also discussed. It was found that the interfaces of these superlattices contain features on two different length scales namely random atomic mixture and ordered mesoscopic domains.

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M3 - Article

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JO - Physical review letters

JF - Physical review letters

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M1 - 106103

ER -

Layer Ordering and Faulting in (GaAs)_n/(AlAs)_n Ultrashort-Period Superlattices

Abstract

ASJC Scopus subject areas

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