Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

TY - JOUR

T1 - Low field mobility of ultra-thin SOI N- and P-MOSFETs

T2 - Measurements and implications on the performance of ultra-short MOSFETs

AU - Esseni, D.

AU - Mastrapasqua, M.

AU - Celler, G. K.

AU - Baumann, F. H.

AU - Fiegn, C.

AU - Selmi, L.

AU - Sangiorgi, E.

PY - 2000

Y1 - 2000

N2 - Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (TSI). However, at small Ninv the mobility is clearly reduced for decreasing TSI. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.

AB - Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (Ninv) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (TSI). However, at small Ninv the mobility is clearly reduced for decreasing TSI. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.

UR - https://www.scopus.com/pages/publications/0034454471

UR - https://www.scopus.com/pages/publications/0034454471#tab=citedBy

U2 - 10.1109/IEDM.2000.904408

DO - 10.1109/IEDM.2000.904408

M3 - Article

SN - 0163-1918

SP - 671

EP - 674

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -