TY - JOUR
T1 - Low-Loss Tunable Infrared Plasmons in the High-Mobility Perovskite (Ba,La)SnO3
AU - Yang, Hongbin
AU - Konečná, Andrea
AU - Xu, Xianghan
AU - Cheong, Sang-Wook
AU - Garfunkel, Eric
AU - García de Abajo, F. Javier
AU - Batson, Philip
N1 - Funding Information: H.Y. and P.E.B. acknowledge the financial support of the US Department of Energy, Office of Science, Basic Energy Sciences under award number DE‐SC0005132. X.X. and S.W.C. were supported by the center for Quantum Materials Synthesis (cQMS), funded by the Gordon and Betty Moore Foundation's EPiQS initiative through grant GBMF10104, and by Rutgers University. F.J.G.A. acknowledges support from the European Research Council (789104‐eNANO) and the Spanish MINECO (PID2020‐112625GB‐I00 and CEX2019‐000910‐S). Publisher Copyright: © 2022 The Authors. Small published by Wiley-VCH GmbH.
PY - 2022/4/21
Y1 - 2022/4/21
N2 - BaSnO3 exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations known as plasmons are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, the existence of relatively long-lived plasmons supported by high-mobility charge carriers in La-doped BaSnO3 (BLSO) is demonstrated. By exploiting the high spatial and energy resolution of electron energy-loss spectroscopy with a focused beam in a scanning transmission electron microscope, the dispersion, confinement ratio, and damping of infrared localized surface plasmons (LSPs) in BLSO nanoparticles are systematically investigated. It is found that LSPs in BLSO exhibit a high degree of spatial confinement compared to those sustained by noble metals and have relatively low losses and high quality factors with respect to other doped oxides. Further analysis clarifies the relation between plasmon damping and carrier mobility in BLSO. The results support the use of nanostructured degenerate semiconductors for plasmonic applications in the infrared region and establish a solid alternative to more traditional plasmonic materials.
AB - BaSnO3 exhibits the highest carrier mobility among perovskite oxides, making it ideal for oxide electronics. Collective charge carrier oscillations known as plasmons are expected to arise in this material, thus providing a tool to control the nanoscale optical field for optoelectronics applications. Here, the existence of relatively long-lived plasmons supported by high-mobility charge carriers in La-doped BaSnO3 (BLSO) is demonstrated. By exploiting the high spatial and energy resolution of electron energy-loss spectroscopy with a focused beam in a scanning transmission electron microscope, the dispersion, confinement ratio, and damping of infrared localized surface plasmons (LSPs) in BLSO nanoparticles are systematically investigated. It is found that LSPs in BLSO exhibit a high degree of spatial confinement compared to those sustained by noble metals and have relatively low losses and high quality factors with respect to other doped oxides. Further analysis clarifies the relation between plasmon damping and carrier mobility in BLSO. The results support the use of nanostructured degenerate semiconductors for plasmonic applications in the infrared region and establish a solid alternative to more traditional plasmonic materials.
KW - monochromated electron energy-loss spectroscopy (EELS)
KW - perovskite oxide
KW - STEM-electron energy-loss spectroscopy (EELS)
KW - surface plasmons
KW - transparent conducting oxides
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U2 - https://doi.org/10.1002/smll.202106897
DO - https://doi.org/10.1002/smll.202106897
M3 - Article
C2 - 35279954
VL - 18
JO - Small
JF - Small
SN - 1613-6810
IS - 16
M1 - 2106897
ER -