Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2-xMn xTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanical Engineering
- Materials Science(all)
- Topological insulators
- X-ray magnetic circular dichroism
- magnetic proximity effect