We report on the growth of modulation-doped GaAs/AlxGa1-xAs heterostructures with extremely low disorder. The structures have mobilities (μ) on the order of 1×106 cm2/V ·s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm-2. In growing these structures we employed the atomic plane doping technique and ultrathick ( > 1000 Å) spacer layers with graded composition. These structures have the highest "figure-of-merit" for mobility (μ/n3/2s) ever reported.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry