MgZnO High-Voltage Transparent Thin-Film Transistors Built on Glass

Yuxuan Li, Fangzhou Yu, Guangyuan Li, Ming Lu, Yicheng Lu

Research output: Contribution to journalArticlepeer-review


Recently, there has been increasing interest in building-integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large-area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high-voltage transparent thin-film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide-bandgap oxide-based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO-based materials with different functions for two roles: a semiconductor Mg0.01Zn0.99O (MZO) as TFT channel and Al-doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high-k-stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 106. The device exhibits an average optical transmittance of 81% over the visible spectrum.

Original languageAmerican English
Article number2200313
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number18
StatePublished - Sep 2022

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering


  • high voltages
  • magnesium zinc oxide
  • thin-film transistors
  • transparent photovoltaics


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