Abstract
Recently, there has been increasing interest in building-integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large-area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high-voltage transparent thin-film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide-bandgap oxide-based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO-based materials with different functions for two roles: a semiconductor Mg0.01Zn0.99O (MZO) as TFT channel and Al-doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high-k-stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 106. The device exhibits an average optical transmittance of 81% over the visible spectrum.
| Original language | American English |
|---|---|
| Article number | 2200313 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 219 |
| Issue number | 18 |
| DOIs | |
| State | Published - Sep 2022 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
- Electrical and Electronic Engineering
Keywords
- high voltages
- magnesium zinc oxide
- thin-film transistors
- transparent photovoltaics