Modeling and simulation of drain current 1/f noise in high-κ based n-MOSFETs

P. Snnivasan, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This work summarizes the results of modeling and simulation of drain current low-frequency (1/f) noise in devices with Hf-based dielectrics as gate oxides. The proposed physics-based model is based on trap-assisted thermally activated tunneling in both the interfacial layer (IL) and the high-κ layer. The model proposed considers not only the location of the traps in the oxide but also the energy level in the interfacial and the high-κ layer The critical factors which influence the drain current noise such as the tunneling time constant, and attenuation parameter are estimated The estimated values are used to model drain current 1/f noise The simulation results agree well with the experimental results, with errors in the acceptable margin levels. The results show the importance of interfacial layer and the temperature in determining the noise levels in high-κ dielectrics.

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages645-655
Number of pages11
Volume11
Edition4
DOIs
StatePublished - Dec 1 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/8/0710/10/07

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Snnivasan, P., & Misra, D. (2007). Modeling and simulation of drain current 1/f noise in high-κ based n-MOSFETs. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., Vol. 11, pp. 645-655) https://doi.org/10.1149/1.2779599