Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating

Yu Zou; Xiulan Huai; Fang Xin; Zhixiong Guo

doi:https://doi.org/10.1115/HT2012-58229

Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating

Yu Zou, Xiulan Huai, Fang Xin, Zhixiong Guo

Engn - Mech & Aerospace Engn

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of ultra-high heat flux conduction induced by ultrafast laser heating in thin Si films. Nanoscale Si films with various depths in heat flux direction are treated as a semi-infinite model for the study of ultrafast heat conduction. A distribution of internal heat source is applied to simulate the absorption of the laser energy in films and the induced temperature distribution. Stress distribution and the evolution of the displacement are calculated. Thermal waves are observed from the development of temperature distribution in the heat flux direction, though the average temperature of the simulated Si films increases monotonically. The average stress shows periodic oscillations. The time development of strain has the same trend as the average stress, and the net heat flux shows the same trend as the stress at different depths of the Si films in the direction of heat flux. This reveals a close relationship between stress and net heat flux in the Si films in the process of ultrafast laser heating.

Original language	English (US)
Title of host publication	ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012
Pages	827-835
Number of pages	9
DOIs	https://doi.org/10.1115/HT2012-58229
State	Published - 2012
Event	ASME 2012 Heat Transfer Summer Conference Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012 - Rio Grande, Puerto Rico Duration: Jul 8 2012 → Jul 12 2012

Publication series

Name	ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012
Volume	2

Other

Other	ASME 2012 Heat Transfer Summer Conference Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012
Country/Territory	Puerto Rico
City	Rio Grande
Period	7/8/12 → 7/12/12

ASJC Scopus subject areas

Fluid Flow and Transfer Processes
Control and Systems Engineering
Electrical and Electronic Engineering
Mechanical Engineering
Condensed Matter Physics

Keywords

Heat conduction
Molecular dynamics simulation
Si thin films
Ultrafast laser heating

Access to Document

https://doi.org/10.1115/HT2012-58229

Cite this

Zou, Y., Huai, X., Xin, F., & Guo, Z. (2012). Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating. In ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012 (pp. 827-835). (ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012; Vol. 2). https://doi.org/10.1115/HT2012-58229

Zou, Yu ; Huai, Xiulan ; Xin, Fang ; Guo, Zhixiong. / Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating. ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012. 2012. pp. 827-835 (ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012).

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title = "Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating",

abstract = "Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of ultra-high heat flux conduction induced by ultrafast laser heating in thin Si films. Nanoscale Si films with various depths in heat flux direction are treated as a semi-infinite model for the study of ultrafast heat conduction. A distribution of internal heat source is applied to simulate the absorption of the laser energy in films and the induced temperature distribution. Stress distribution and the evolution of the displacement are calculated. Thermal waves are observed from the development of temperature distribution in the heat flux direction, though the average temperature of the simulated Si films increases monotonically. The average stress shows periodic oscillations. The time development of strain has the same trend as the average stress, and the net heat flux shows the same trend as the stress at different depths of the Si films in the direction of heat flux. This reveals a close relationship between stress and net heat flux in the Si films in the process of ultrafast laser heating.",

keywords = "Heat conduction, Molecular dynamics simulation, Si thin films, Ultrafast laser heating",

author = "Yu Zou and Xiulan Huai and Fang Xin and Zhixiong Guo",

year = "2012",

doi = "https://doi.org/10.1115/HT2012-58229",

language = "English (US)",

isbn = "9780791844786",

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pages = "827--835",

booktitle = "ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012",

note = "ASME 2012 Heat Transfer Summer Conference Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012 ; Conference date: 08-07-2012 Through 12-07-2012",

}

Zou, Y, Huai, X, Xin, F & Guo, Z 2012, Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating. in ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012. ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012, vol. 2, pp. 827-835, ASME 2012 Heat Transfer Summer Conference Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012, Rio Grande, Puerto Rico, 7/8/12. https://doi.org/10.1115/HT2012-58229

Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating. / Zou, Yu; Huai, Xiulan; Xin, Fang; Guo, Zhixiong.

ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012. 2012. p. 827-835 (ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating

AU - Zou, Yu

AU - Huai, Xiulan

AU - Xin, Fang

AU - Guo, Zhixiong

PY - 2012

Y1 - 2012

N2 - Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of ultra-high heat flux conduction induced by ultrafast laser heating in thin Si films. Nanoscale Si films with various depths in heat flux direction are treated as a semi-infinite model for the study of ultrafast heat conduction. A distribution of internal heat source is applied to simulate the absorption of the laser energy in films and the induced temperature distribution. Stress distribution and the evolution of the displacement are calculated. Thermal waves are observed from the development of temperature distribution in the heat flux direction, though the average temperature of the simulated Si films increases monotonically. The average stress shows periodic oscillations. The time development of strain has the same trend as the average stress, and the net heat flux shows the same trend as the stress at different depths of the Si films in the direction of heat flux. This reveals a close relationship between stress and net heat flux in the Si films in the process of ultrafast laser heating.

AB - Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of ultra-high heat flux conduction induced by ultrafast laser heating in thin Si films. Nanoscale Si films with various depths in heat flux direction are treated as a semi-infinite model for the study of ultrafast heat conduction. A distribution of internal heat source is applied to simulate the absorption of the laser energy in films and the induced temperature distribution. Stress distribution and the evolution of the displacement are calculated. Thermal waves are observed from the development of temperature distribution in the heat flux direction, though the average temperature of the simulated Si films increases monotonically. The average stress shows periodic oscillations. The time development of strain has the same trend as the average stress, and the net heat flux shows the same trend as the stress at different depths of the Si films in the direction of heat flux. This reveals a close relationship between stress and net heat flux in the Si films in the process of ultrafast laser heating.

KW - Heat conduction

KW - Molecular dynamics simulation

KW - Si thin films

KW - Ultrafast laser heating

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U2 - https://doi.org/10.1115/HT2012-58229

DO - https://doi.org/10.1115/HT2012-58229

M3 - Conference contribution

SN - 9780791844786

T3 - ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012

SP - 827

EP - 835

BT - ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012

T2 - ASME 2012 Heat Transfer Summer Conference Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012

Y2 - 8 July 2012 through 12 July 2012

ER -

Zou Y, Huai X, Xin F, Guo Z. Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating. In ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012. 2012. p. 827-835. (ASME 2012 Heat Transfer Summer Conf. Collocated with the ASME 2012 Fluids Engineering Div. Summer Meeting and the ASME 2012 10th Int. Conf. on Nanochannels, Microchannels and Minichannels, HT 2012). https://doi.org/10.1115/HT2012-58229

Molecular dynamics simulation of heat conduction in Si thin films induced by ultrafast laser heating

Abstract

Publication series

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ASJC Scopus subject areas

Keywords

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