Monte Carlo simulation of Gunn effect and microwave power generation at 240 GHz in n+-n--n-n+ GaN structures

J. H. Zhao, V. Gruzinskis, M. Weiner, M. Pan, P. Shiktorov, E. Starikov

Research output: Contribution to journalConference articlepeer-review

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Electron transport, Gunn oscillation condition and microwave power generation in n+-n--n-n+ GaN structures have been studied by Monte Carlo Particle simulation which solves BTE and Poisson's equation along with the equations governing the associated circuit elements and a parasitic contact resistance. Temperature and frequency dependence of microwave power generation and conversion efficiency will be presented for zincblende GaN n+-n--n-n+ transferred electron devices (TEDs) in a parallel resonant circuit.

Original languageAmerican English
Pages (from-to)II/-
JournalMaterials Science Forum
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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