Nanomechanical properties of strained silicon-on-insulator (SOT) films epitaxially grown on Si1-xGex and layer transferred by wafer bonding

Nathanael Miller, Kandabara Tapily, Helmut Baumgart, George K. Celler, Francois Brunier, A. A. Elmustafa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Using nanoindentation, we report on the elasto-mechanical properties of multiple thin films of strained Silicon-on-Insulator (sSOl) and extreme strained Silicon-onInsulator (xsSOI). We measured the hardness and elastic moduli of the films. Both the hardness and elastic moduli were determined for the surface layers of SOT, 5i02, and the bulk silicon using the continuous stiffness method (CSM) XP Nano Instruments Nanoindentation tester. The measured hardness values for bi-axially tensile strained sSOI films and relaxed SOT films are found to be 9.23 GPa and 9.36 GPa respectively. The moduli are 101.2 GPa and 105.6 GPa respectively. Since these values are different from the bulk Si values of 12.5 GPa and 160.0 GPa for hardness and modulus, further investigation of the elastic properties of the nanolayers composite will be performed including simulation.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Surface and Interfacial Nanomechanics
Pages95-101
Number of pages7
StatePublished - 2007
Externally publishedYes
EventSurface and Interfacial Nanomechanics - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1021

Other

OtherSurface and Interfacial Nanomechanics - 2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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