Negative Capacitance MgZnO-Channel Thin-Film Transistor with Ferroelectric NiMgZnO in the Gate Stack

TY - JOUR

T1 - Negative Capacitance MgZnO-Channel Thin-Film Transistor with Ferroelectric NiMgZnO in the Gate Stack

AU - Yu, Fangzhou

AU - Hong, Wen Chiang

AU - Li, Guangyuan

AU - Li, Yuxuan

AU - Lu, Ming

AU - Lu, Yicheng

N1 - Funding Information: Manuscript received December 25, 2020; revised January 16, 2021; accepted January 17, 2021. Date of publication January 19, 2021; date of current version February 24, 2021. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract DE-SC0012704. The review of this letter was arranged by Editor B. Govoreanu. (Corresponding author: Yicheng Lu.) Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, and Yicheng Lu are with the Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 USA (e-mail: ylu@soe.rutgers.edu). Publisher Copyright: © 1980-2012 IEEE.

PY - 2021/3

Y1 - 2021/3

N2 - We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg0.03Zn0.97O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni0.02Mg0.15Zn0.83O (NMZO) serves as the ferroelectric layer in the NMZO/SiO2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current {I}_{D} reaches 10{{9}}.

AB - We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg0.03Zn0.97O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni0.02Mg0.15Zn0.83O (NMZO) serves as the ferroelectric layer in the NMZO/SiO2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current {I}_{D} reaches 10{{9}}.

KW - Negative capacitance

KW - magnesium zinc oxide

KW - subthreshold swing

KW - thin film transistor

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U2 - https://doi.org/10.1109/LED.2021.3052911

DO - https://doi.org/10.1109/LED.2021.3052911

M3 - Article

SN - 0741-3106

VL - 42

SP - 355

EP - 358

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 9328548

ER -