Nonmonotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in (formula presented)

H. Noh, Jongsoo Yoon, D. C. Tsui, M. Shayegan

Research output: Contribution to journalArticlepeer-review

Abstract

We studied low temperature (formula presented) mK) in-plane magnetoresistance of a dilute two-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits an apparent metal-insulator transition. We found an anisotropic magnetoresistance, which changes dramatically at high in-plane fields (formula presented) T) as the hole density is varied. At high densities where the system behaves metallic at (formula presented) the transverse magnetoresistance is larger than the longitudinal magnetoresistance. With decreasing the hole density the difference becomes progressively smaller, and at densities near the “critical” density and lower, the longitudinal magnetoresistance becomes larger than the transverse magnetoresistance.

Original languageAmerican English
Article number081309
Pages (from-to)813091-813094
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number8
DOIs
StatePublished - Aug 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this