On the metal-insulator transition in n-type doped CuGaSe2

J. H. Schön, Ch Kloc, E. Arushanov, Gordon Thomas, E. Bucher

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Transport properties of n-type CuGaSe2 single crystals are investigated in the temperature range from 2 to 350 K. The effective donor concentration is varied between 2×1012 and 4.4×1017 cm-3 by co-doping with Ge and Zn. The charge transport properties are analyzed and interpreted in the framework of an Anderson metal-insulator transition. A critical donor concentration Nc of 1.4×1017 cm-3 is estimated, which is in good agreement with the Mott criterion (Nc1/3≈0.25/aH). However, the second characteristic concentration, above which the Fermi level merges into the conduction band, was not observed experimentally. This is in accordance with an estimate of 7×1017 cm-3 according to the Matsubara-Toyozawa criterion, which exceeds the highest donor concentrations achieved in this material so far. The effective dopant density in n-type CuGaSe2 is limited by self-compensation due to intrinsic defects (mainly Cu vacancies). Furthermore, at low temperatures a crossover from Mott- to Efros-Shklovskii-type variable range hopping is observed on the dielectric side of the transition.

Original languageEnglish (US)
Pages (from-to)4603-4611
Number of pages9
JournalJournal of Physics Condensed Matter
Volume12
Issue number21
DOIs
StatePublished - May 29 2000
Externally publishedYes

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Metal insulator transition
Transport properties
Doping (additives)
insulators
Fermi level
Conduction bands
metals
Vacancies
Charge transfer
transport properties
Single crystals
Temperature
Defects
crossovers
conduction bands
single crystals
defects
estimates
temperature
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Schön, J. H. ; Kloc, Ch ; Arushanov, E. ; Thomas, Gordon ; Bucher, E. / On the metal-insulator transition in n-type doped CuGaSe2. In: Journal of Physics Condensed Matter. 2000 ; Vol. 12, No. 21. pp. 4603-4611.
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On the metal-insulator transition in n-type doped CuGaSe2. / Schön, J. H.; Kloc, Ch; Arushanov, E.; Thomas, Gordon; Bucher, E.

In: Journal of Physics Condensed Matter, Vol. 12, No. 21, 29.05.2000, p. 4603-4611.

Research output: Contribution to journalArticle

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