Organic semiconductor interfaces: Electronic structure and transport properties

TY - JOUR

T1 - Organic semiconductor interfaces

T2 - Electronic structure and transport properties

AU - Hill, I. G.

AU - Milliron, D.

AU - Schwartz, J.

AU - Kahn, A.

N1 - Funding Information: Support of this work by the MRSEC program of the National Science Foundation (award #DMR-9809483) and by the New Jersey Center for Optoelectronics (grant #97-2890-051-17) is gratefully acknowledged. One of the authors (I.H.) acknowledges support from NSERC of Canada. The authors also thank the groups of S.R. Forrest and M.T. Thompson for providing the organic materials.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - Ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) have been used to investigate a wide range of metal/organic and organic/organic semiconductor interfaces. UPS was used to determine the binding energies of the highest occupied molecular orbitals and vacuum level positions, while XPS was used to find evidence of chemical interactions at these heterointerfaces. It was found that, with a few exceptions, the vacuum levels align at most organic/organic interfaces, while strong interface dipoles, which abruptly offset the vacuum level, exist at virtually all metal/organic semiconductor interfaces. Furthermore, strong dipoles exist at metal/organic semiconductor interfaces at which the Fermi level is completely unpinned within the semiconductor gap implying that the dipoles are not the result of populating or emptying Fermi level-pinning gap states.

AB - Ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) have been used to investigate a wide range of metal/organic and organic/organic semiconductor interfaces. UPS was used to determine the binding energies of the highest occupied molecular orbitals and vacuum level positions, while XPS was used to find evidence of chemical interactions at these heterointerfaces. It was found that, with a few exceptions, the vacuum levels align at most organic/organic interfaces, while strong interface dipoles, which abruptly offset the vacuum level, exist at virtually all metal/organic semiconductor interfaces. Furthermore, strong dipoles exist at metal/organic semiconductor interfaces at which the Fermi level is completely unpinned within the semiconductor gap implying that the dipoles are not the result of populating or emptying Fermi level-pinning gap states.

UR - https://www.scopus.com/pages/publications/0034299266

UR - https://www.scopus.com/pages/publications/0034299266#tab=citedBy

U2 - 10.1016/S0169-4332(00)00449-9

DO - 10.1016/S0169-4332(00)00449-9

M3 - Article

SN - 0169-4332

VL - 166

SP - 354

EP - 362

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -