Oxidation induced stress in SiO2/SiC structures

Xiuyan Li; Alexei Ermakov; Voshadhi Amarasinghe; Eric Garfunkel; Leonard C. Feldman

doi:https://doi.org/10.1063/1.4979544

Oxidation induced stress in SiO₂/SiC structures

Xiuyan Li, Alexei Ermakov, Voshadhi Amarasinghe, Eric Garfunkel, Leonard C. Feldman

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Physical stress in SiO₂/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ∼10⁸Pa compressive stress in the SiO₂ film in a SiO₂/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ∼900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.

Original language	English (US)
Article number	141604
Journal	Applied Physics Letters
Volume	110
Issue number	14
DOIs	https://doi.org/10.1063/1.4979544
State	Published - Apr 3 2017

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{fd97cd94fc144ddfbca54f77e8fc163e,

title = "Oxidation induced stress in SiO2/SiC structures",

abstract = "Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ∼108Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ∼900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.",

author = "Xiuyan Li and Alexei Ermakov and Voshadhi Amarasinghe and Eric Garfunkel and Feldman, {Leonard C.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = apr,

day = "3",

doi = "https://doi.org/10.1063/1.4979544",

language = "English (US)",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Oxidation induced stress in SiO2/SiC structures

AU - Li, Xiuyan

AU - Ermakov, Alexei

AU - Amarasinghe, Voshadhi

AU - Garfunkel, Eric

AU - Feldman, Leonard C.

PY - 2017/4/3

Y1 - 2017/4/3

N2 - Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ∼108Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ∼900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.

AB - Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 °C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a ∼108Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000ī) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above ∼900 °C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation.

UR - http://www.scopus.com/inward/record.url?scp=85016943842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016943842&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/1.4979544

DO - https://doi.org/10.1063/1.4979544

M3 - Article

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 141604

ER -

Oxidation induced stress in SiO₂/SiC structures

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